The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Nov. 06, 2014
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Toshio Hasegawa, Delmar, NY (US);
Hideaki Yamasaki, Akasaka, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method is provided for forming a semiconductor device. According to one embodiment, the method includes providing a substrate having a Ge-containing film thereon, identifying a first plasma processing recipe that uses a metal chloride precursor to deposit a first metal layer on the Ge-containing film at a higher rate than the Ge-containing film is etched by the metal chloride precursor, identifying a second plasma processing recipe that uses the metal chloride precursor to etch the Ge-containing film at a higher rate than a second metal layer is deposited on the Ge-containing film by the metal chloride precursor, performing the first plasma processing recipe to deposit the first metal layer on the Ge-containing film, and performing the second plasma processing recipe to deposit the second metal layer on the first metal layer, and where the second metal layer is deposited at a higher rate than the first metal layer.