The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2016

Filed:

Mar. 17, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Wei-Che Chen, Kaohsiung, TW;

Chun-Mao Chiou, Chiayi County, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/28 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28008 (2013.01); H01L 29/401 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region defined thereon; forming a gate structure on the first region, in which the gate structure comprises a first hard mask and a second hard mask thereon; forming a first mask layer on the first region and the second region; removing part of the first mask layer; removing the second hard mask; forming a second mask layer on the first region and the second region; removing part of the second mask layer; and removing the first hard mask.


Find Patent Forward Citations

Loading…