The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jun. 04, 2015
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Tsai-Yu Wen, Tainan, TW;
Shih-Cheng Chen, Tainan, TW;
Shan Ye, Kaohsiung, TW;
Tsuo-Wen Lu, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02181 (2013.01); H01L 21/0228 (2013.01); H01L 21/28194 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method for forming a HfOx film based on atomic layer deposition (ALD) process includes: providing a substrate; dividing a plurality of ALD cycles as needed into multiple depositing stages, wherein each of the ALD cycles includes applying HfClpulse and applying HO pulse over the substrate and a content ratio of HfClto HO is different and increasing for the depositing stages; and performing the depositing stages to form a HfOx film.