The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Apr. 29, 2015
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Venkatasubramanian Narayanan, San Diego, CA (US);
Keith Alan Bowman, Morrisville, NC (US);
Alex Dongkyu Park, San Diego, CA (US);
Francois Ibrahim Atallah, Raleigh, NC (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 29/12 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 29/12 (2013.01); G11C 11/419 (2013.01);
Abstract
In a static random access memory (SRAM), such as an SRAM cache in a processor or system-on-a-chip (SoC) device, an aging sensor is provided for testing degradation of SRAM cells comprising p-channel metal oxide semiconductor (PMOS) transistors. The minimum power supply voltage Vfor the SRAM may be dynamically scaled up as the SRAM ages by performing read tests with and without the wordline overdrive voltage V.