The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Oct. 06, 2014
Cindy X. Qiu, Brossard, CA;
Andy Shih, Brossard, CA;
Yi-chi Shih, Los Angeles, CA (US);
LU Han, Brossard, CA;
Chunong Qiu, Brossard, CA;
Ishiang Shih, Brossard, CA;
Cindy X. Qiu, Brossard, CA;
Andy Shih, Brossard, CA;
Yi-Chi Shih, Los Angeles, CA (US);
Lu Han, Brossard, CA;
Chunong Qiu, Brossard, CA;
Ishiang Shih, Brossard, CA;
Other;
Abstract
One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.