The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Dec. 04, 2012
Applicant:

Koninklijke Philips N.v., Eindhoven, NL;

Inventors:

Stefano Schiaffino, Pleasanton, CA (US);

Alexander H. Nickel, Santa Clara, CA (US);

Jipu Lei, San Jose, CA (US);

Assignee:

Koninklijke Philips N.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 33/005 (2013.01); H01L 33/0079 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0033 (2013.01);
Abstract

A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region and first and second metal contacts, wherein the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region. First and second metal layers are disposed on the first and second metal contacts, respectively. The first and second metal layers are sufficiently thick to mechanically support the semiconductor structure. A sidewall of one of the first and second metal layers comprises a three-dimensional feature.


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