The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
May. 02, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Wen Chu Hsiao, Tainan, TW;
Lai Wan Chong, Kaohsiung, TW;
Chun-Chieh Wang, Kaohsiung, TW;
Ying Min Chou, Tainan, TW;
Hsiang Hsiang Ko, Sinying, TW;
Ying-Lang Wang, Tien-Chung Village, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7845 (2013.01); H01L 29/0603 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/6653 (2013.01); H01L 29/66515 (2013.01); H01L 29/66636 (2013.01); H01L 29/7847 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor device includes a source/drain feature in a substrate. The source/drain feature has an upper portion and a lower portion, the upper portion having a lower concentration of Ge than the lower portion. A Si-containing layer over the source/drain feature includes a metal silicide layer.