logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9324854 B1

PDFFull Text
Date of Patent:
Apr. 26, 2016

Filed:

Mar. 26, 2014

Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Till Schloesser, Dresden, DE;

Peter Baars, Dresden, DE;

Frank Jakubowski, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:

Amerson Law Firm, PLLC

Primary Examiner:

Jaehwan Oh

Int. Cl.
CPC ...
H01L 29/772 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/288 (2013.01); H01L 21/28518 (2013.01); H01L 21/28525 (2013.01); H01L 21/76816 (2013.01); H01L 21/823412 (2013.01); H01L 21/823425 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/165 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes a high-k metal gate electrode structure that is positioned above an active region, has a top surface that is positioned at a gate height level, and includes a high-k dielectric material and an electrode metal. Raised drain and source regions are positioned laterally adjacent to the high-k metal gate electrode structure and connect to the active region, and a top surface of each of the raised drain and source regions is positioned at a contact height level that is below the gate height level. An etch stop layer is positioned above the top surface of the raised drain and source regions and a contact element connects to one of the raised drain and source regions, the contact element extending through the etch stop layer and a dielectric material positioned above the high-k metal gate electrode structure and the raised drain and source regions.

Find Patent Forward Citations

Loading…