The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Aug. 18, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/26513 (2013.01); H01L 29/66515 (2013.01); H01L 29/78 (2013.01);
Abstract
Methods for forming gates without spacers and the resulting devices are disclosed. Embodiments may include forming a channel layer on a substrate; forming a dummy gate on the channel layer; forming an interlayer dielectric (ILD) on the channel layer and surrounding the dummy gate; forming a trench within the ILD and the channel layer by removing the dummy gate and the channel layer below the dummy gate; forming an un-doped channel region at the bottom of the trench; and forming a gate above the un-doped channel region within the trench.