The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Jan. 21, 2015
Phil-ouk Nam, Hwaseong-si, KR;
Dong-chul Yoo, Seongnam-si, KR;
Bi-o Kim, Seoul, KR;
Jae-young Ahn, Seongnam-si, KR;
Byong-hyun Jang, Suwon-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Phil-Ouk Nam, Hwaseong-si, KR;
Dong-Chul Yoo, Seongnam-si, KR;
Bi-O Kim, Seoul, KR;
Jae-Young Ahn, Seongnam-si, KR;
Byong-Hyun Jang, Suwon-si, KR;
Ki-Hyun Hwang, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A vertical memory device including a substrate including first regions and a second region; a plurality of channels in the first regions, the plurality of channels extending in a first direction substantially perpendicular to a top surface of the substrate; a charge storage structure on a sidewall of each channel in a second direction substantially parallel to the top surface of the substrate; a plurality of gate electrodes in the first regions, the plurality of gate electrodes arranged on a sidewall of the charge storage structure and spaced apart from each other in the first direction; and a plurality of supporters in the second region, the plurality of supporters spaced apart from each other in a third direction substantially perpendicular to the first direction and the second direction, the plurality of supporters contacting a sidewall of at least one gate electrode.