The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Dec. 23, 2014
Applicants:
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventors:
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 27/088 (2006.01); H01L 21/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 22/14 (2013.01); H01L 22/22 (2013.01); H01L 27/0207 (2013.01);
Abstract
A method for manufacturing an integrated circuit may include the following steps: forming a first transistor, which includes a first active region; forming a second transistor, which includes a second active region; forming a third transistor, which includes a gate electrode that overlaps each of the first active region and the second active region; and providing a predetermined voltage to the gate electrode for turning off the third transistor to isolate the first transistor from the second transistor.