The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Feb. 19, 2015
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Ryoji Asakura, Tokyo, JP;

Kenji Tamaki, Tokyo, JP;

Akira Kagoshima, Tokyo, JP;

Daisuke Shiraishi, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 21/30 (2006.01); G01R 31/00 (2006.01); H01L 21/67 (2006.01); G01J 3/443 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); G01J 3/443 (2013.01); H01J 37/32009 (2013.01); H01J 37/3244 (2013.01); H01J 37/32926 (2013.01); H01L 21/67253 (2013.01);
Abstract

A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.


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