The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Oct. 10, 2013
Murata Manufacturing Co., Ltd., Nagaokakyo-Shi, JP;
National Institute for Materials Science, Ibaraki, JP;
MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;
NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Tsukuba-Shi, Ibaraki, JP;
Abstract
A thin film capacitor includes a substrate and a dielectric thin film element formed on the substrate. The substrate can include an Si plate, an SiOfilm on the Si plate, and a Ti film formed on the SiOfilm. The dielectric thin film element includes a lower electrode, a dielectric thin film on the lower electrode, and an upper electrode formed on the dielectric thin film. The dielectric thin film is a thin film formed of a nanosheet, and a void portion of the dielectric thin film is filled with a p-type conductive organic polymer. TiO, CaNbOor the like, is used as a dielectric material to form a major component of the nanosheet. As the p-type conductive organic polymer, polypyrrole, polyaniline, polyethylene dioxythiophene or the like, is suitable.