The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2016

Filed:

Jul. 30, 2014
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Kuo Pin Chang, Miaoli County, TW;

Chih-Shen Chang, Taipei, TW;

Hang-Ting Lue, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01);
Abstract

Control transistors and memory cells within 3D NAND Flash memory arrays may both be created using the same technology, such as charge trapping structures, to simplify the fabrication process. However, the resulting control transistors may initially have higher variability in threshold voltages, when compared to traditional gate-oxide-based control transistors. Provided are exemplary techniques to trim control transistors to provide increased reliability and performance during array operation.


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