The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
May. 05, 2014
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Sirish K. Reddy, Hillsboro, OR (US);
Alice G. Hollister, Tigard, OR (US);
Thorsten Lill, Santa Clara, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
A47J 31/60 (2006.01); C11D 11/00 (2006.01); C11D 17/04 (2006.01); C11D 7/12 (2006.01); H01L 21/027 (2006.01); C11D 3/39 (2006.01);
U.S. Cl.
CPC ...
A47J 31/60 (2013.01); C11D 3/3942 (2013.01); C11D 7/12 (2013.01); C11D 11/0041 (2013.01); C11D 17/041 (2013.01); C11D 17/046 (2013.01); H01L 21/0271 (2013.01); A47J 2203/00 (2013.01);
Abstract
Provided are methods of forming ashable hard masks (AHMs) with high etch selectivity and low hydrogen content using plasma enhanced chemical vapor deposition. Methods involve exposing a first layer to be etched on a semiconductor substrate to a carbon source and sulfur source, and generating a plasma to deposit a sulfur-doped AHM or amorphous carbon-based film on the first layer.