The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Feb. 02, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Ming He, Menands, NY (US);
Kunaljeet Tanwar, Slingerlands, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/3205 (2006.01); H01L 21/321 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/3212 (2013.01); H01L 21/32051 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/564 (2013.01);
Abstract
A method of forming a thinner barrier/liner stack for vias and metal lines and the resulting device are disclosed. Embodiments include forming a via through an interlayer dielectric (ILD) and capping layer, down to a first metal layer; forming a moisture scavenging layer precursor over the ILD and on side and bottom surfaces of the via; annealing the moisture scavenging layer precursor, forming a moisture scavenging layer; forming a barrier/liner stack over the moisture scavenging layer; and depositing a second metal layer over the barrier/liner stack and filling the via and trench.