The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Nov. 04, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Sok-Won Lee, Yongin-si, KR;

Joon-Hee Lee, Seongnam-si, KR;

Jung-Dal Choi, Hwaseong-si, KR;

Seong-Min Jo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 31/112 (2006.01); H01L 23/482 (2006.01); H01L 23/52 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/764 (2006.01); H01L 27/115 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4821 (2013.01); H01L 21/0337 (2013.01); H01L 21/32139 (2013.01); H01L 21/764 (2013.01); H01L 21/768 (2013.01); H01L 21/7682 (2013.01); H01L 21/76837 (2013.01); H01L 21/76838 (2013.01); H01L 21/76885 (2013.01); H01L 21/76895 (2013.01); H01L 23/4827 (2013.01); H01L 23/52 (2013.01); H01L 23/5222 (2013.01); H01L 23/53295 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11565 (2013.01); H01L 23/528 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Conductive line structures, and methods of forming the same, include first and second pattern structures, insulation layer patterns and an insulating interlayer. The first pattern structure includes a conductive line pattern and a hard mask stacked, and extends in a first direction. The second pattern structure includes a second conductive line pattern and another hard mask stacked, and at least a portion of the pattern structure extends in the first direction. The insulation layer patterns contact end portions of the pattern structures. The first pattern structure and an insulation layer pattern form a closed curve shape in plan view, and the second pattern structure and another insulation layer pattern form another closed curve shape in plan view. The insulating interlayer covers upper portions of the pattern structures and the insulation layer patterns, an air gap between the pattern structures, and another air gap between the insulation layer patterns.


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