The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Oct. 05, 2011
Applicants:

Ronald Naumann, Dresden, DE;

Volker Grimm, Langebrueck, DE;

Andrey Zakharov, Dresden, DE;

Ralf Richter, Dresden, DE;

Inventors:

Ronald Naumann, Dresden, DE;

Volker Grimm, Langebrueck, DE;

Andrey Zakharov, Dresden, DE;

Ralf Richter, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); H01L 21/0206 (2013.01); H01L 21/823807 (2013.01); H01L 29/7848 (2013.01);
Abstract

When forming strain-inducing dielectric material layers above transistors of different conductivity type, the patterning of at least one strain-inducing dielectric material may be accomplished on the basis of a process sequence in which a negative influence of a fluorine species in an oxygen plasma upon removing the resist mask is avoided or at least significantly suppressed. For example, a substantially oxygen-free plasma process may be applied for removing the resist material.


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