The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Mar. 16, 2007
Vidyut Gopal, Saratoga, CA (US);
Shankar Sinha, Redwood Shores, CA (US);
Jean Yee-mei Yang, Glendale, CA (US);
Phillip L. Jones, Fremont, CA (US);
Vidyut Gopal, Saratoga, CA (US);
Shankar Sinha, Redwood Shores, CA (US);
Jean Yee-Mei Yang, Glendale, CA (US);
Phillip L. Jones, Fremont, CA (US);
CYPRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Abstract
In patterning a transistor, some of a layer of gate dielectric material is allowed to remain over a semiconductor substrate upon which the transistor is formed. This remaining dielectric material retards the implantation of dopants into the underlying substrate, effectively lengthening a channel region of the transistor. This mitigates unwanted short channel effects, such as leakage currents, for example, and thus mitigates yield loss by establishing a transistor that performs in a more predictable or otherwise desirable manner.