The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Dec. 19, 2013
Applicant:
Intevac, Inc., Santa Clara, CA (US);
Inventors:
Vinay Prabhakar, Cupertino, CA (US);
Babak Adibi, Los Altos, CA (US);
Assignee:
INTEVAC, INC., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01); C23C 16/00 (2006.01); H01L 21/266 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 21/426 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01J 37/32412 (2013.01); H01J 37/32422 (2013.01); H01J 37/32623 (2013.01); H01L 21/426 (2013.01); H01L 31/0682 (2013.01); H01L 31/1804 (2013.01); Y02E 10/50 (2013.01);
Abstract
A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming beamlets of ions that diverge in one direction. A mask is used to form the implanted shapes on the wafer, wherein the holes in the mask are oriented orthogonally to the direction of beamlet divergence.