The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Jan. 05, 2015
International Business Machines Corporation, Armonk, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Pouya Hashemi, White Plains, NY (US);
Effendi Leobandung, Stormville, NY (US);
Dae-Gyu Park, Poughquaq, NY (US);
Min Yang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for fabricating a semiconductor device includes receiving a gated finned substrate comprising an isolation layer with a semiconductor fin formed thereon and a gate formed over the semiconductor fin, depositing an atomic layer of dopant on a portion of the semiconductor fin that is laterally adjacent to the gate, forming a lateral spacer on a sidewall of the gate and above a gate extension portion of the atomic layer of dopant, and epitaxially growing a raised source or drain region on the semiconductor fin, that is laterally adjacent to the lateral spacer, from the atomic layer of dopant. The method may also include conducting a low temperature annealing process to diffuse the atomic layer of dopant to the raised source or drain region of the semiconductor fin. A corresponding apparatus is also disclosed herein.