The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 19, 2016

Filed:

Aug. 27, 2014
Applicant:

Hitachi High-tech Science Corporation, Minato-ku, Tokyo, JP;

Inventors:

Xin Man, Tokyo, JP;

Tatsuya Asahata, Tokyo, JP;

Atsushi Uemoto, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/305 (2006.01); G01Q 70/16 (2010.01); H01J 37/317 (2006.01); H01J 37/20 (2006.01); H01J 37/244 (2006.01);
U.S. Cl.
CPC ...
H01J 37/317 (2013.01); H01J 37/20 (2013.01); H01J 37/244 (2013.01); H01J 2237/2067 (2013.01); H01J 2237/20214 (2013.01); H01J 2237/2445 (2013.01);
Abstract

A charged particle beam apparatus includes an electron beam irradiation unit that irradiates a sample with electron beams along a first irradiation axis. A rotation stage holds the sample and has a rotation axis in a direction perpendicular to the first irradiation axis. An ion beam irradiation unit irradiates the sample with ion beams along a second irradiation axis that is substantially parallel to the rotation axis to process the sample into a needle shape. A detection unit detects at least one of charged particles and X rays generated via the sample by the irradiation with the ion beams or the electron beams, and a gaseous ion beam irradiation unit irradiates the sample with gaseous ion beams. A control unit controls the apparatus to incrementally rotate the rotation stage repeatedly by a predetermined angle to rotate the rotation stage by 360° in conjunction with irradiating the entire surface of the needle-shaped sample in a circumferential direction with the gaseous ion beams to remove ions implanted during processing the sample by the ion beams.


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