The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Apr. 07, 2009
Kuang-jung Chen, Poughkeepsie, NY (US);
Wu-song Huang, Brewster, NY (US);
Wai-kin LI, Beacon, NY (US);
Kuang-Jung Chen, Poughkeepsie, NY (US);
Wu-Song Huang, Brewster, NY (US);
Wai-kin Li, Beacon, NY (US);
GLOBALFOUNRIES INC., Grand Cayman, KY;
Abstract
A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.