The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Jul. 02, 2015
Applicant:

United Silicon Carbide, Inc., Monmouth Junction, NJ (US);

Inventor:

Xueqing Li, East Brunswick, NJ (US);

Assignee:

United Silicon Carbide, Inc., Monmouth Junction, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H03K 17/60 (2006.01);
U.S. Cl.
CPC ...
H03K 17/16 (2013.01); H03K 17/161 (2013.01); H03K 17/60 (2013.01);
Abstract

A high-voltage switching device is formed by: connecting a number of normally-on transistors, such as JFETs, in series with each other, where the drain of each transistor is connected to the source of the next; connecting the chain of normally-on transistors in series with a normally-off switch component, such as a MOSFET, where the drain of the normally-off switch component is connected to the source of the first transistor in the chain in the chain; and, for each transistor, connecting a voltage-clamping device, such as a diode, with the anode of the voltage-clamping device connected to the source of the transistor and the cathode of the voltage-clamping device connected to the gate of the next transistor in the chain.


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