The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Mar. 13, 2012
Ming-hua Lo, Zhongli, TW;
Zhen-yu LI, Chiayai County, TW;
Hsing-kuo Hsia, Jhubei, TW;
Hao-chung Kuo, Tsu-bai, TW;
Ming-Hua Lo, Zhongli, TW;
Zhen-Yu Li, Chiayai County, TW;
Hsing-Kuo Hsia, Jhubei, TW;
Hao-Chung Kuo, Tsu-bai, TW;
TSMC SOLID STATE LIGHTING LTD., Hsinchu, TW;
Abstract
The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a vertical LED die in some embodiments. The LED die includes a substrate. A p-doped III-V compound layer and an n-doped III-V compound layer are each disposed over the substrate. A multiple quantum well (MQW) layer is disposed between the p-doped III-V compound layer and the n-doped III-V compound layer. The p-doped III-V compound layer includes a first region having a non-exponential doping concentration characteristic and a second region having an exponential doping concentration characteristic. In some embodiments, the second region is formed using a lower pressure than the first region.