The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9312383 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 12, 2016

Filed:

Aug. 12, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Wilfried Ernst-August Haensch, Somers, NY (US);

Ali Khakifirooz, Los Altos, CA (US);

Davood Shahrjerdi, White Plains, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/02532 (2013.01); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/6656 (2013.01); H01L 29/66666 (2013.01);
Abstract

Semiconductor devices having vertical field effect transistors with self-aligned source and drain contacts are provided, as well as methods for fabricating vertical field effect transistors with self-aligned source and drain contacts.


Find Patent Forward Citations

Cheng, Kangguo. (2016). Self-aligned contacts for vertical field effect transistors (U.S. Patent No. 9312383). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9312383

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