The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Apr. 10, 2014
Omnivision Technologies, Inc., Santa Clara, CA (US);
Oray Orkun Cellek, Mountain View, CA (US);
Dajiang Yang, San Jose, CA (US);
Sing-Chung Hu, San Jose, CA (US);
Philip John Cizdziel, San Jose, CA (US);
Dyson Tai, San Jose, CA (US);
Gang Chen, San Jose, CA (US);
Cunyu Yang, Milpitas, CA (US);
Zhiqiang Lin, Santa Clara, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.