The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Jan. 31, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Ju-Youn Kim, Suwon-si, KR;
Sang-Duk Park, Hwaseong-si, KR;
Jae-Kyung Seo, Yongin-si, KR;
Kwang-Sub Yoon, Yongin-si, KR;
In-Gu Yoon, Yongin-si, KR;
Abstract
In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.