The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Dec. 20, 2012
Applicant:
Invensas Corporation, San Jose, CA (US);
Inventors:
Belgacem Haba, Saratoga, CA (US);
Fatima Lina Ayatollahi, Fremont, CA (US);
Michael Newman, Dublin, CA (US);
Pezhman Monadgemi, Fremont, CA (US);
Assignee:
Invensas Corporation, San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/50 (2006.01); H01L 23/522 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/50 (2013.01); H01L 23/5226 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Microelectronic elements and methods of their manufacture are disclosed. A microelectronic element may include a substrate including an opening extending through a semiconductor region of the substrate, a dielectric layer cover a wall of the opening within at least a first portion of the opening, a first metal disposed within the first portion of the opening, a second metal disposed within a second portion of the opening. The second metal may form at least part of a contact of the microelectronic element.