The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2016

Filed:

Jun. 04, 2015
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akira Takahashi, Miyagi, JP;

Kei Nakayama, Tokyo, JP;

Yoshiki Igarashi, Miyagi, JP;

Shin Hirotsu, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32165 (2013.01); H01J 37/32009 (2013.01); H01J 37/32082 (2013.01); H01J 37/32137 (2013.01); H01J 37/32146 (2013.01); H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/3065 (2013.01); H01L 21/30655 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01);
Abstract

Disclosed is a method for etching an insulation film of a processing target object. The method includes: in a first term, periodically switching ON and OFF of a high frequency power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus; and in a second term subsequent to the first term, setting the high frequency power to be continuously turned ON so as to excite the processing gas supplied into the processing container. In one cycle consisting of a term where the high frequency is turned ON and a term where the high frequency power is turned OFF in the first term, the second term is longer than the term where the high frequency power is turned ON.


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