The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Apr. 02, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/304 (2006.01); H01J 37/317 (2006.01); G03F 1/74 (2012.01); H01J 37/305 (2006.01);
U.S. Cl.
CPC ...
H01J 37/304 (2013.01); G03F 1/74 (2013.01); H01J 37/3056 (2013.01); H01J 37/3174 (2013.01); H01J 2237/063 (2013.01); H01J 2237/30466 (2013.01); H01J 2237/31725 (2013.01); H01J 2237/31744 (2013.01); Y10S 430/143 (2013.01);
Abstract
A method includes scanning a lithography mask with a repair process, and measuring back-scattered electron signals of back-scattered electrons generated from the scanning. An endpoint is determined from the back-scattered electron signals. A stop point is calculated from the endpoint. The step of scanning is stopped when the calculated stop point is reached.
Chen, Chien-Lin. (2016). Endpoint detection for photolithography mask repair (U.S. Patent No. 9312101). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9312101
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile