The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9306155 B1

Date of Patent:

Apr. 05, 2016

Filed:

Feb. 03, 2014

Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications

Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Xueti Tang, San Jose, CA (US);

Jang Eun Lee, Cupertino, CA (US);

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;

Attorney:

Convergent Law Group LLP

Primary Examiner:

Jami M Valentine

Int. Cl.

CPC ...

H01L 29/82 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01);

U.S. Cl.

CPC ...

H01L 43/10 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);

Abstract

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer includes at least one of a hybrid perpendicular magnetic anisotropy (PMA) structure and tetragonal bulk perpendicular magnetic anisotropy (B-PMA) structure. At least one of the free layer and the pinned layer have a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Find Patent Forward Citations

Tang, Xueti. (2016). Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications (U.S. Patent No. 9306155). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9306155

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