The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Aug. 14, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Augustin J. Hong, White Plains, NY (US);
Marinus J. Hopstaken, Carmel, NY (US);
Jeehwan Kim, White Plains, NY (US);
John A. Ott, Greenwood Lake, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0376 (2006.01); H01L 31/075 (2012.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/075 (2013.01); H01L 31/03762 (2013.01); H01L 31/03767 (2013.01); H01L 31/202 (2013.01); Y02E 10/548 (2013.01); Y02P 70/521 (2015.11);
Abstract
Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.