The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Jan. 29, 2014
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Liang-Chen Chi, Hsinchu, TW;
Chia-Ming Tsai, Zhubei, TW;
Chin-Kun Wang, Hsinchu, TW;
Jhih-Jie Huang, Taipei, TW;
Miin-Jang Chen, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Abstract
A semiconductor device and methods of formation are provided. A semiconductor device includes a dielectric film over a dielectric layer. The dielectric film includes a crystalline structure having a substantially uniform composition of zirconium, nitrogen and oxygen. The dielectric film is formed through in situ nitrogen plasma doping of a zirconium layer. The dielectric film functions as a gate dielectric. The dielectric film has a high dielectric constant between about 28-29 and has a low leakage current density of about 4.79×10A/cm. The substantially uniform distribution of nitrogen throughout the zirconium oxide of the dielectric film increases the k value of the dielectric film by between about 15% to about 17% as compared to a dielectric film that has a non-uniform distribution of nitrogen through a zirconium oxide layer.