The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Mar. 14, 2012
Hans-joachim Schulze, Taufkirchen, DE;
Manfred Kotek, Villach, AT;
Johannes Baumgartl, Riegersdorf, AT;
Markus Harfmann, Villach, AT;
Christian Krenn, Viktring, AT;
Thomas Neidhart, Klagenfurt, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Manfred Kotek, Villach, AT;
Johannes Baumgartl, Riegersdorf, AT;
Markus Harfmann, Villach, AT;
Christian Krenn, Viktring, AT;
Thomas Neidhart, Klagenfurt, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A first semiconductor zone of a first conduction type is formed from a semiconductor base material doped with first and second dopants. The first and second dopants are different substances and also different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes either a decrease or an increase of a lattice constant of the pure, undoped first semiconductor zone. The second dopant may be electrically active, and may be of the same doping type as the first dopant, causes one or both of: a hardening of the first semiconductor zone; an increase of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes a decrease, and a decrease of the lattice constant of the pure, undoped first semiconductor zone if the first dopant causes an increase, respectively.