The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Jul. 18, 2013
High voltage metal-oxide-metal (hv-mom) device, hv-mom layout and method of making the hv-mom device
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Chung Chen, Keelung, TW;
Shu Fang Fu, Xinpu Township, TW;
Chang-Sheng Liao, Zhudong Township, TW;
Abstract
A high voltage metal-oxide-metal (HV-MOM) device includes a substrate, a deep well in the substrate and at least one high voltage well in the substrate over the deep well. The HV-MOM device further includes a dielectric layer over each high voltage well of the at least one high voltage well and a gate structure over the dielectric layer. The HV-MOM device further includes an inter-layer dielectric (ILD) layer over the substrate, the ILD layer surrounding the gate structure. The HV-MOM device further includes a first inter-metal dielectric (IMD) layer over the ILD layer and a first metal feature in the first IMD layer, wherein the first metal feature is part of a MOM capacitor.