The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Mar. 14, 2014
Applicant:

Avago Technologies General Ip (Singapore) Pte. Ltd., Singapore, SG;

Inventors:

Detlef Bernd Krabe, Munich, DE;

Josef Wittl, Parsberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 31/0203 (2014.01); H01L 25/16 (2006.01); H01L 33/00 (2010.01); H01L 31/18 (2006.01); H01L 31/16 (2006.01); H01L 33/52 (2010.01); H01S 5/022 (2006.01); H01S 5/02 (2006.01); H05K 1/18 (2006.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 25/165 (2013.01); H01L 31/0203 (2013.01); H01L 31/16 (2013.01); H01L 31/18 (2013.01); H01L 33/005 (2013.01); H01L 33/52 (2013.01); H01S 5/0201 (2013.01); H01S 5/02248 (2013.01); H01S 5/02272 (2013.01); H05K 1/181 (2013.01); H01L 2224/11 (2013.01); H01L 2224/18 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0033 (2013.01); H05K 2201/10121 (2013.01); H05K 2201/10727 (2013.01); H05K 2201/10977 (2013.01); Y02P 70/521 (2015.11);
Abstract

Methods are provided for making embedded Wafer-Level Packaging (eWLP) devices, packages and assemblies. The eWLP methods allow back side electrical and/or thermal connections to be easily and economically made at the eWLP wafer level without having to use thru-mold vias (TMVs) or thru-silicon vias (TSVs) to make such connections. In order to create TMVs, processes such as reactive ion etching or laser drilling followed metallization are needed, which present difficulties and increase costs. In addition, the eWLP methods allow electrical and optical interfaces to be easily and economically formed on the front side and/or on the back side of the eWLP wafer, which allows the eWLP methods to be used to form optoelectronic devices having a variety of useful configurations.


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