The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Oct. 29, 2013
Applicant:
Sumitomo Electric Device Innovations, Inc., Yokohama, JP;
Inventor:
Masahiro Nishi, Yokohama, JP;
Assignee:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28575 (2013.01); H01L 21/768 (2013.01); H01L 21/76841 (2013.01); H01L 21/76843 (2013.01); H01L 23/53219 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01);
Abstract
A method of fabricating a semiconductor device includes: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1 μm or less, and the metal layer being exposed in the first portion.