The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Oct. 21, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Wook-Je Kim, Gwacheon-si, KR;
Jae-Yup Chung, Yongin-si, KR;
Jong-Seo Hong, Yongin-si, KR;
Cheol Kim, Hwaseong-si, KR;
Hee-Soo Kang, Seoul, KR;
Hyun-Jo Kim, Seoul, KR;
Hee-Don Jeong, Hwaseong-si, KR;
Soo-Hun Hong, Gunpo-si, KR;
Sang-Bom Kang, Seoul, KR;
Myeong-Cheol Kim, Suwon-si, KR;
Young-Su Chung, Suwon-si, KR;
Abstract
Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.