The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Apr. 16, 2014
Applicant:
Globalfoundries, Inc., Grand Cayman, KY (US);
Inventors:
Steven Bentley, Watervliet, NY (US);
Kejia Wang, Poughkeepsie, NY (US);
Sylvie Mignot, Albany, NY (US);
Shurong Liang, Poughkeepsie, NY (US);
Assignee:
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/02057 (2013.01); H01L 21/76224 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
Integrated circuits and methods for producing such integrated circuits are provided. A method for producing the integrated circuit includes forming dummy structures in a substrate, and forming shallow trench isolation regions between the dummy structures where the shallow trench isolation regions includes a liner overlying a core. The dummy structures are etched to expose structure bases, and the structure bases are precleaned. Replacement structures are epitaxially grown over the structure bases.