The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
May. 19, 2014
Globalfoundries Inc., Grand Cayman, KY;
Xusheng Wu, Ballston Lake, NY (US);
Changyong Xiao, Mechanicville, NY (US);
Min-hwa Chi, Malta, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A transistor, planar or non-planar (e.g., FinFET), includes T-shaped contacts to the source, drain and gate. The top portion of the T-shaped contact is wider than the bottom portion, the bottom portion complying with design rule limits. A conductor-material filled trench through a multi-layer etching stack above the transistor provides the top portions of the T-shaped contacts. Tapered spacers along inner sidewalls of the top contact portion prior to filling allow for etching a narrower bottom trench down to the gate, and to the source/drain for silicidation prior to filling.