The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Apr. 19, 2013
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventors:
Youhei Oda, Okazaki, JP;
Yoshitaka Noda, Ichinomiya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/308 (2013.01);
Abstract
A trench is etched in a semiconductor wafer by turning a first introduced gas introduced into a reaction chamber into plasma. A protection film is formed on a wall surface of the trench by turning a second introduced gas introduced into the reaction chamber into plasma. The protection film formed on a bottom surface of the trench is removed by turning a third introduced gas introduced into the reaction chamber into plasma. The reaction chamber is evacuated after the protection film formed on the bottom surface of the trench is removed.