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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9299573 B1

PDFFull Text
Date of Patent:
Mar. 29, 2016

Filed:

Mar. 12, 2013

Polishing method

Applicant:

Hitachi Chemical Company, Ltd., Tokyo, JP;

Inventors:

Kouji Mishima, Hitachi, JP;

Masato Fukasawa, Hitachi, JP;

Masaya Nishiyama, Hitachi, JP;

Assignee:

HITACHI CHEMICAL COMPANY, LTD., Tokyo, JP;

Attorney:

Fitch, Even, Tabin & Flannery, LLP

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/304 (2006.01); H01L 21/306 (2006.01); C09K 13/06 (2006.01); C09K 3/14 (2006.01); C09G 1/00 (2006.01); C09G 1/04 (2006.01); C09G 1/06 (2006.01); B81C 1/00 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); C09G 1/02 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); B81C 1/00 (2013.01); C09G 1/00 (2013.01); C09G 1/02 (2013.01); C09G 1/04 (2013.01); C09G 1/06 (2013.01); C09K 3/1409 (2013.01); C09K 3/1436 (2013.01); C09K 3/1463 (2013.01); C09K 3/1472 (2013.01); C09K 13/06 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76898 (2013.01); H01L 21/31053 (2013.01);
Abstract

Provided is a polishing method that polishes a substrate having (1) silicon nitride as a stopper, and, on the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material. The method includes a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material. The CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.

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