The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Oct. 08, 2014
Applicant:
M31 Technology Corporation, Hsinchu County, TW;
Inventor:
Nan-Chun Lien, Taipei, TW;
Assignee:
M31 Technology Corporation, Zhubei, Hsinchu County, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 11/419 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 7/1051 (2013.01); G11C 7/1078 (2013.01); G11C 7/22 (2013.01);
Abstract
A static random access memory (SRAM) includes a voltage generator coupled to receive a positive power supply voltage, and to controllably generate a first power supply voltage, which is with a reduced level and is higher than a retention voltage during a specific period. A first inverter and a second inverter each is connected between the first power supply voltage and a second power supply voltage. The first inverter and the second inverter are cross-coupled, and the output nodes of the first inverter and the second inverter act as a bit node pair.