The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Oct. 29, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hyun-Min Choi, Uiwang, KR;
Juyoun Kim, Suwon-si, KR;
Shigenobu Maeda, Seongnam-si, KR;
Jihoon Yoon, Seoul, KR;
Sungman Lim, Seoul, KR;
Abstract
A variable resistance memory device includes a gate pattern and a dummy gate pattern provided at the same level on a substrate, a first contact pattern provided on the dummy gate pattern, and a variable resistance pattern provided between the dummy gate pattern and the first contact pattern. The gate pattern and the dummy gate pattern define conductive electrodes of functional and non-functional transistors, respectively. The first contact pattern and the dummy gate pattern define upper and lower electrodes on the variable resistance pattern, respectively. Related fabrication methods are also discussed.