The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Jul. 17, 2013
Globalfoundries Inc., Grand Cayman, KY;
Zhenyu Hu, Clifton Park, NY (US);
Richard J. Carter, Saratoga Springs, NY (US);
Andy Wei, Queensbury, NY (US);
Qi Zhang, Mechanicville, NY (US);
Sruthi Muralidharan, Troy, NY (US);
Amy L. Child, Wilton, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.