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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9293543 B1

PDFFull Text
Date of Patent:
Mar. 22, 2016

Filed:

Oct. 02, 2013

Film forming method and film forming apparatus

Applicants:

Tokyo Electron Limited, Tokyo, JP;

Osaka University, Osaka, JP;

Inventors:

Shuji Azumo, Ibaraki, JP;

Yusaku Kashiwagi, Ibaraki, JP;

Yuichiro Morozumi, Tokyo, JP;

Yu Wamura, Iwate, JP;

Katsushige Harada, Yamanashi, JP;

Kosuke Takahashi, Iwate, JP;

Heiji Watanabe, Osaka, JP;

Takayoshi Shimura, Osaka, JP;

Takuji Hosoi, Osaka, JP;

Assignees:

TOKYO ELECTRON LIMITED, Tokyo, JP;

OSAKA UNIVERSITY, Osaka, JP;

Attorney:

Rothwell, Figg, Ernst & Manbeck, P.C.

Primary Examiner:

Zandra Smith

Assistant Examiner:

Molly Reida

Int. Cl.
CPC ...
H01L 21/283 (2006.01); H01L 21/441 (2006.01); H01L 29/51 (2006.01); H01L 29/40 (2006.01); H01L 21/04 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); C23C 16/303 (2013.01); C23C 16/308 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02252 (2013.01); H01L 21/02271 (2013.01); H01L 21/02326 (2013.01); H01L 21/02332 (2013.01); H01L 21/044 (2013.01); H01L 21/049 (2013.01); H01L 21/28264 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/66045 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract

Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

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