The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Dec. 24, 2014
Applicant:
Hitachi Metals, Ltd., Tokyo, JP;
Inventors:
Harunori Sakaguchi, Hitachi, JP;
Takeshi Tanaka, Naka-gun, JP;
Yoshinobu Narita, Mito, JP;
Takeshi Meguro, Kitaibaraki, JP;
Assignee:
SCIOCS COMPANY LIMITED, Hitachi-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 29/778 (2013.01);
Abstract
A nitride semiconductor epitaxial wafer includes a substrate, and a nitride semiconductor layer formed on the substrate, the nitride semiconductor layer including a (002) plane in an upper surface thereof. An in-plane dispersion of a full width half maximum (FWHM) of an X-ray rocking curve in the (002) plane or a (100) plane of the nitride semiconductor layer is not more than 30%. The wafer is not less than 100 μm in thickness and not less than 50 mm in diameter.