The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Dec. 31, 2013
Infineon Technologies Austria Ag, Villach, AT;
Franz Hirler, Isen, DE;
Roman Knoefler, Villach, DE;
Anton Mauder, Kolbermoor, DE;
Hans Weber, Bayerisch-Gmain, DE;
Joachim Weyers, Hoehenkirchen, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A power semiconductor device includes a semiconductor body having a first surface and including an active area including n-type semiconductor regions and p-type semiconductor regions, the n-type semiconductor regions alternating, in a direction substantially parallel to the first surface, with the p-type semiconductor regions. The semiconductor body further includes a peripheral area surrounding the active area and including a low-doped semiconductor region having a first concentration of n-dopants lower than a doping concentration of n-dopants of the n-type semiconductor regions, and at least one auxiliary semiconductor region having a concentration of n-dopants higher than the first concentration and a concentration of p-dopants higher than the first concentration.