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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9293363 B1

PDFFull Text
Date of Patent:
Mar. 22, 2016

Filed:

Jul. 21, 2015

Methods and structures for back end of line integration

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Sunil K. Singh, Mechanicville, NY (US);

Ravi P. Srivastava, Clifton Park, NY (US);

Mark A. Zaleski, Galway, NY (US);

Akshey Sehgal, Malta, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Williams Morgan, P.C.

Primary Examiner:

Long K Tran

Assistant Examiner:

Dzung Tran

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/4763 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76828 (2013.01); H01L 21/02118 (2013.01); H01L 21/02126 (2013.01); H01L 21/31051 (2013.01); H01L 21/31138 (2013.01); H01L 21/32133 (2013.01); H01L 21/7681 (2013.01); H01L 21/7685 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76832 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 21/76892 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 23/53295 (2013.01); H01L 23/5222 (2013.01); H01L 23/53223 (2013.01); H01L 23/53266 (2013.01);
Abstract

Embodiments of the present invention provide a semiconductor structure for BEOL (back end of line) integration. A directed self assembly (DSA) material is deposited and annealed to form two distinct phase regions. One of the phase regions is selectively removed, and the remaining phase region serves as a mask for forming cavities in an underlying layer of metal and/or dielectric. The process is then repeated to form complex structures with patterns of metal separated by dielectric regions.

Find Patent Forward Citations

Singh, Sunil. (2016). Methods and structures for back end of line integration (U.S. Patent No. 9293363). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9293363

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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